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Proceedings Paper

Interferometric lithography at 46.9 nm
Author(s): M. G. Capeluto; Georgiy O. Vaschenko; Michael E. Grisham; Mario C. Marconi; Carmen S. Menoni; Jorge J.G. Rocca; S. Luduena; L. Pietrasanta
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Paper Abstract

We present the first results of nano-patterning in poly-methyl methacrylate (PMMA) photo-resist using a 46.9 nm tabletop extreme ultraviolet (EUV) laser. As a proof of principle, we recorded a Fresnel diffraction pattern of a copper mesh with 19 μm square holes. Results of ongoing interference experiments will also be presented.

Paper Details

Date Published: 21 October 2004
PDF: 4 pages
Proc. SPIE 5622, 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications, (21 October 2004); doi: 10.1117/12.592201
Show Author Affiliations
M. G. Capeluto, Univ. de Buenos Aires (Argentina)
Georgiy O. Vaschenko, Colorado State Univ. (United States)
Michael E. Grisham, Colorado State Univ. (United States)
Mario C. Marconi, Univ. de Buenos Aires (Argentina)
Colorado State Univ. (United States)
Carmen S. Menoni, Colorado State Univ. (United States)
Jorge J.G. Rocca, Colorado State Univ. (United States)
S. Luduena, Univ. de Buenos Aires (Argentina)
L. Pietrasanta, Univ. de Buenos Aires (Argentina)


Published in SPIE Proceedings Vol. 5622:
5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications
Aristides Marcano O.; Jose Luis Paz, Editor(s)

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