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Proceedings Paper

1.55-μm light emission from InAs QDs embedded in a high-Q photonic crystal microcavity
Author(s): Satoshi Iwamoto; Jun Tatebayashi; Tatsuya Fukuda; Toshihiro Nakaoka; Satomi Ishida; Yasuhiko Arakawa
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Paper Abstract

We fabricated and characterized photonic crystal (PhC) microcavities containing InAs quantum dots (QDs) grown on (100) GaAs substrates. QD emission coupled with a PhC cavity mode at a wavelength of 1.55 μm was observed at room temperature. The cavity quality factor Q and its ratio to the mode volume V, Q/V, reach up to 2700 and 3400 x (n/λ)3, respectively. To our knowledge, these are the highest values for microcavities containing QDs emitting at wavelengths around 1.5 μm. The large enhancement of emission intensity at the cavity resonances was clearly observed. The enhancement factor is ~10-100, which depends on cavity modes and pump power density.

Paper Details

Date Published: 13 April 2005
PDF: 8 pages
Proc. SPIE 5733, Photonic Crystal Materials and Devices III, (13 April 2005); doi: 10.1117/12.591909
Show Author Affiliations
Satoshi Iwamoto, The Univ. of Tokyo (Japan)
Jun Tatebayashi, The Univ. of Tokyo (Japan)
Tatsuya Fukuda, The Univ. of Tokyo (Japan)
Toshihiro Nakaoka, The Univ. of Tokyo (Japan)
Satomi Ishida, The Univ. of Tokyo (Japan)
Yasuhiko Arakawa, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 5733:
Photonic Crystal Materials and Devices III
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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