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Proceedings Paper

The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes
Author(s): J. D. Thomson; I. A. Pope; P. M. Smowton; P. Blood; R. J. Lynch; G. Hill; T. Wang; P. J. Parbrook
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Paper Abstract

We have measured the pulsed light-current characteristics of a series of InGaN/GaN quantum well light-emitting diodes which were annealed post-growth at different temperatures as a function of their operating temperature. The light output at a fixed current density increases with the temperature of measurement, reaches a maximum and then decreases for all the diodes. The measurement temperature at which the maximum light output occurs and the magnitude of the light output depend on the post-growth thermal anneal temperature. The thermal anneal temperature is thought to affect the acceptor concentration in the p-doped cap layer, which also changes the carrier mobility. A simulation, incorporating carrier leakage, is used to reproduce the experimental behavior where the acceptor concentration is changed to represent the effects of the different anneal temperatures.

Paper Details

Date Published: 28 April 2005
PDF: 6 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.591897
Show Author Affiliations
J. D. Thomson, Cardiff Univ. (United Kingdom)
I. A. Pope, Cardiff Univ. (United Kingdom)
P. M. Smowton, Cardiff Univ. (United Kingdom)
P. Blood, Cardiff Univ. (United Kingdom)
R. J. Lynch, Univ. of Sheffield (United Kingdom)
G. Hill, Univ. of Sheffield (United Kingdom)
T. Wang, Univ. of Sheffield (United Kingdom)
P. J. Parbrook, Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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