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Proceedings Paper

Composition dependence of the dry etching of MOCVD-grown AlxGa1-xAs
Author(s): Graciela R. Guel; Christian F. Schaus; Kevin J. Malloy
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Paper Abstract

Ar+ ion milling of A1xGa1-xAs layers grown by Low Pressure MOCVD, with aluminum compositions from 10 to 80% and for ion energies from 300to 1200 eV is reported in this work. The etch rate decreases with Al composition and increases with ion energy. The ion milling rate was found to depend exponentially on the ion energy, with an activation energy of 0.02 eV. Results are compared with the milling of a GaAs control sample and device layers etched under similar conditions. Etching was also studied as a function of ion angle-of-incidence.

Paper Details

Date Published: 26 June 1992
PDF: 3 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59175
Show Author Affiliations
Graciela R. Guel, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)
Kevin J. Malloy, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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