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Proceedings Paper

Laterally-injected high-performance lasers by impurity-induced disordering
Author(s): Wei-Xiong Zou; K. K. Law; Liangchen Wang; D. Bruce Young; James L. Merz; Richard J. Fu; Chi-Shain Hong
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Paper Abstract

We report on novel laterally-injected lasers by impurity-induced disordering (lID) having a self-aligned structure and planar configuration. The laterally-injected lID (LID) lasers have minimum threshold current I=2.6 mA, maximum light output 12 mW with differential quantum efficiency 1d3697' per facet at RT CW operation. The LID laser can also be injected vertically by using an ndoped (instead of semi-insulating) GaAs substrate and making additional ohmic contact on the bottom surface of the wafer. The problem of having much higher series resistance when the laser was in the lateral injection mode than in the vertical injection mode was investigated by studying the I-V characteristics of different combinations of the top and bottom ohmic contacts, and was solved by revising the material design and the device processing procedures.

Paper Details

Date Published: 26 June 1992
PDF: 6 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59174
Show Author Affiliations
Wei-Xiong Zou, Univ. of California/Santa Barbara (United States)
K. K. Law, Univ. of California/Santa Barbara (United States)
Liangchen Wang, Univ. of California/Santa Barbara (United States)
D. Bruce Young, Univ. of California/Santa Barbara (United States)
James L. Merz, Univ. of California/Santa Barbara (United States)
Richard J. Fu, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Chi-Shain Hong, Boeing Aerospace & Electronics High Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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