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Proceedings Paper

Laser assisted etching to fabricate a buried continuous graded cavity for unstable semiconductor laser diodes
Author(s): Michael S. Allen; Salvador Guel-Sandoval; John Gerard McInerney
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Paper Abstract

We have developed a method to etch Ill-V semiconductor materials to produce a parabolic cross sectioned channel. Laser-assisted wet-chemical etching has been used to produce channels 20 to 200 p.m wide, with a corresponding center depth of 0.1 to 0.5 .tm. We will discuss recent experimental results of etching n-type gallium arsenide (GaAs). Future considerations include the fabrication of antiguided wide-stripe laser diodes using this procedure.

Paper Details

Date Published: 26 June 1992
PDF: 10 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59173
Show Author Affiliations
Michael S. Allen, Phillips Lab. (United States)
Salvador Guel-Sandoval, Univ. of New Mexico (United States)
John Gerard McInerney, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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