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Proceedings Paper

Semiconductor laser with unstable resonator consisting of negative cylindrical lenses
Author(s): Swaminathan T. Srinivasan; Christian F. Schaus; Shang Zhu Sun; Eric A. Armour; Alan H. Paxton; David J. Gallant; Charles E. Moeller
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Paper Abstract

We have obtained high power single-lateral-mode operation in wide-stripe InGaAs/GaAs/A1GaAs semiconductor lasers using a monolithic unstable resonator (consisting of diverging elements incorporated above an asymmetric GRIN-SCH). The fabrication involves MOCVD regrowth after wet-chemical etching of lens-like patterns in a GaAs layer above the active region. Pulsed output powers of 175 mW and 490 mW have been obtained in 170 p.m and 100 tm wide lasers respectively, with spatial coherence in the near-field exceeding 60%. We observe good lateral mode discrimination upto 3.5 times threshold in 100 .tm stripes with a round-trip magnification of 6.4.

Paper Details

Date Published: 26 June 1992
PDF: 7 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59172
Show Author Affiliations
Swaminathan T. Srinivasan, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)
Shang Zhu Sun, Univ. of New Mexico (United States)
Eric A. Armour, Univ. of New Mexico (United States)
Alan H. Paxton, Mission Research Corp. (United States)
David J. Gallant, Rockwell Power Systems (United States)
Charles E. Moeller, Phillips Lab. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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