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Proceedings Paper

Application of metal-organic chemical vapor deposition to vertical-cavity surface-emitting lasers
Author(s): Eric A. Armour; Shang Zhu Sun; David P. Kopchik; Kang Zheng; Ping Zhou; Julian Cheng; Christian F. Schaus
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Paper Abstract

We have successfully used low-pressure metal-organic chemical vapor deposition (LP-MOCVD) to grow GaAs/A1GaAs vertical-cavity surface-emitting lasers containing graded-index distributed Bragg reflector (DBR) mirrors. The continuously-graded mirror heterojunctions were obtained by maintaining a constant growth temperature while ramping the reactant gas flows. Graded interfaces were found to reduce the energy-band discontinuities, resulting in improved electrical charteristics. A 35 p.m diameter device has a series resistance of 22 , a CW output power of 2 mW, a threshold current density of 1.2 kA/cm2, an overall power efficiency of 3.0%, and a turn-on voltage of 2.3 V.

Paper Details

Date Published: 26 June 1992
PDF: 6 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59171
Show Author Affiliations
Eric A. Armour, Univ. of New Mexico (United States)
Shang Zhu Sun, Univ. of New Mexico (United States)
David P. Kopchik, Univ. of New Mexico (United States)
Kang Zheng, Univ. of New Mexico (United States)
Ping Zhou, Univ. of New Mexico (United States)
Julian Cheng, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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