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Proceedings Paper

576x6 ROIC for MCT LWIR arrays
Author(s): Fiodor Fedorovych Sizov; Yuriy P. Derkach; Sergei V. Korinets; Vladimir P. Reva
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Paper Abstract

Silicon ROIC for MCT LWIR 576x6 diode matrix arrays was designed. It includes 4 blocks of 144x6 arrays with 56x43 micron pixels. Diodes shift perpendicular to scanning direction is 0.25 of pixel size. ROICs were designed for their manufacturing by 0.6 micron design rules CMOS technology with 2 polysilicon levels and 2 metal levels. Six elements TDI function is used with bidirectional scanning, “dead” elements deselection, gain trim control, image data format and integration time selection, 8 levels input capacity programming, direct testing of the PV sensitive elements, etc. Max input capacity is 2.7 pC, the capacity at the TDI output register is about 2.0 pC, the output signal amplitude is not less than 2.8 V, the dynamic range is 77 dB. There are 8 video outputs, and the frequency range is 5 MHz.

Paper Details

Date Published: 7 April 2005
PDF: 6 pages
Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); doi: 10.1117/12.591708
Show Author Affiliations
Fiodor Fedorovych Sizov, V. Lashkariov Institute of Semiconductor Physics (Ukraine)
Yuriy P. Derkach, Institute of Microdevices (Ukraine)
Sergei V. Korinets, Institute of Microdevices (Ukraine)
Vladimir P. Reva, Institute of Microdevices (Ukraine)


Published in SPIE Proceedings Vol. 5726:
Semiconductor Photodetectors II
Marshall J. Cohen; Eustace L. Dereniak, Editor(s)

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