Share Email Print
cover

Proceedings Paper

Design of InGaAs strained quantum-well lasers for high-temperature operation
Author(s): Pamela L. Derry; Richard J. Fu; Chi-Shain Hong; Eric Y. Chan; K. Chiu; Harold E. Hager; Luis Figueroa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The effect of high temperature on the threshold gain and threshold current density of an InGaAs (GaAs based) strained quantum well laser is examined both theoretically and experimentally. It is shown that designing a quantum well laser for low threshold gain through the use of a long laser cavity and/or high reflectivity facet coatings will reduce the temperature induced threshold current increase. This result is related to the nonlinear dependence of quantum well gain and current density on carrier density. The high temperature characteristics of strained InGaAs and GaAs QWs are also compared.

Paper Details

Date Published: 26 June 1992
PDF: 12 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59169
Show Author Affiliations
Pamela L. Derry, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Richard J. Fu, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Chi-Shain Hong, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Eric Y. Chan, Boeing Aerospace & Electronics High Technology Ctr. (United States)
K. Chiu, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Harold E. Hager, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Luis Figueroa, Boeing Aerospace & Electronics High Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

© SPIE. Terms of Use
Back to Top