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Proceedings Paper

(InAs)1/(GaAs)4 superlattices strained quantum-well lasers
Author(s): Naresh Chand; Niloy K. Dutta; John Lopata
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Paper Abstract

We report the fabrication and performance of (InAs)1 /(GaAs)4 short-period superlattices (SPS) strained quantum-well lasers emiuing near 1 jim. The (InAs)1 /(GaAs)4 superlattices is an ordered counterpart of 'NO.2Ga8As random alloy, and provides an alternative method of fabricating high speed electronic and photonic devices. The 0.96-mm-long devices have lased with a broad area threshold current density of 100 A cm 2 The 250-p.m long ridge waveguide lasers fabricated on the same wafer have a threshold current of 10 mA, an external differential quantum efficiency of 0.35 mW/mA/facet and have operated to a temperature of 200°C with a characteristic temperature T0 = l75K in the 2O°C to 8O°C range.

Paper Details

Date Published: 26 June 1992
PDF: 7 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59168
Show Author Affiliations
Naresh Chand, AT&T Bell Labs. (United States)
Niloy K. Dutta, AT&T Bell Labs. (United States)
John Lopata, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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