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Proceedings Paper

InGaAs/GaAs/InGaP strained-layer-quantum-well lasers grown by gas-source molecular beam epitaxy
Author(s): Jenn-Ming Kuo; Ming C. Wu; Young-Kai Chen; M. A. Chin; A. Michael Sergent
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Paper Abstract

Aluminum-free InO.2Ga0.8As/GaAs/In0.49Ga0.5l P strained-layer-quantum-well lasers are grown by gas-source molecular beam epitaxy (GSMBE) for the first time. Ridge waveguide lasers of 3 p.m width show 1.0 im lasing wavelength at room temperature under continuous wave (CW) conditions and have low threshold currents (7 mA and 12 mA for 254 p.m and 508 jim-long cavity, respectively), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW). High temperature CW operation has been demonstrated up to 185°C, which is comparable to the best result (200°C) reported for the InGaAs/GaAs/AlGaAs lasers. Self-align index guided InGaAs/GaAsIInGaP lasers are also fabricated using GSMBE in two growth steps. Threshold current of 12 mA with an external differential quantum efficiency of 0.68 mW/mA is obtained from a 2.5 jtm x 508 tm self-aligned laser at room temperature under CW operation condition.

Paper Details

Date Published: 26 June 1992
PDF: 6 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59167
Show Author Affiliations
Jenn-Ming Kuo, AT&T Bell Labs. (United States)
Ming C. Wu, AT&T Bell Labs. (United States)
Young-Kai Chen, AT&T Bell Labs. (United States)
M. A. Chin, AT&T Bell Labs. (United States)
A. Michael Sergent, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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