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Proceedings Paper

Silicon quadrant detector in CMOS technology
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Paper Abstract

An optoelectronic device that detect visible light is designed in silicon technology, peaking in 650 nm wavelength. The quadrant detector (QD) derive photocurrents by projecting a light spot on four photodiodes placed close to each other on a silicon common substrate. The photodetector is square shaped with 2.25 mm2 per active area by each quadrant and the size of the device is 9 mm2. This work describes a technology to develop position sensitive detectors of four quadrant optimizing geometry to increase sensitivity. We propose to integrate sensor into complementary metal-oxide-semiconductor (CMOS) technology in order to improve photodetector out signal, reducing noise generated when photodetector is so far from data acquisition system.

Paper Details

Date Published: 21 October 2004
PDF: 4 pages
Proc. SPIE 5622, 5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications, (21 October 2004); doi: 10.1117/12.591669
Show Author Affiliations
Alicia Vera-Marquina, Univ. de Sonora (Mexico)
Alfonso Torres Jacome, Instituto Nacional de Astrofisica, Optica y Electronica (Mexico)


Published in SPIE Proceedings Vol. 5622:
5th Iberoamerican Meeting on Optics and 8th Latin American Meeting on Optics, Lasers, and Their Applications

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