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Proceedings Paper

Characteristics and reliability of high temperature strained quantum well lasers
Author(s): Chi-Shain Hong; Richard J. Fu; Luis Figueroa
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Paper Abstract

InGaAs/GaAs strained-layer quantum well lasers have been successfully demonstrated for very high temperature CW operation up to 200 C. The lasers show promising reliability data at 70 C, 100 C, and 125 C and high output power of about 300 mW with a 3-micron ridge-waveguide structure.

Paper Details

Date Published: 26 June 1992
PDF: 11 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59166
Show Author Affiliations
Chi-Shain Hong, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Richard J. Fu, Boeing Aerospace & Electronics High Technology Ctr. (United States)
Luis Figueroa, Boeing Aerospace & Electronics High Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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