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Proceedings Paper

Infrared laser cathode-ray tubes of high efficiency at room temperature
Author(s): Boris M. Lavrushin
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Paper Abstract

It is shown that in homogeneous GaAs surface emitting cavity the laser efficiency may be high enough owing to the cavity passive part bleaching, induced by optical field in the laser cavity. The external differential efficiency of 19 and 5.7 % , obtained at 77 and 300 K, respectively, are limited only by a free carrier absorption both in active and passive parts of the cavity. The further laser efficiency improvement is obtained in the variable-gap GaA1As heterostructure,in which the narrow-gap side is used as the cavity active part. The room temperature laser emission of S watts power and external differential efficiency of 14% have been obtained in the GaA1As with grad Eg 3-4 eV/mm under electron beam of 0.6 mA current at the electron energy of 75keV.

Paper Details

Date Published: 26 June 1992
PDF: 9 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59165
Show Author Affiliations
Boris M. Lavrushin, P.N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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