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Proceedings Paper

New laser marking technology using ultrafast lasers
Author(s): Bo Gu
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Paper Abstract

Laser marking of silicon wafers has been an industrial standard for many years. One of the emerging challenges for wafer marking is the recent introduction of very thin wafers. In this paper, we present a completely new laser marking technology using ultra-fast lasers in an attempt to address these challenges. Permanent and high contrast shallow marks (less than 1 micron) on silicon wafers are achieved with no bump or kerf height. The visibility of these marks is independent of the viewing angle, which is very unique and desirable. Mark font sizes much less than 0.3 mm have been demonstrated, which shows potential for micro and nano marking.

Paper Details

Date Published: 12 April 2005
PDF: 5 pages
Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); doi: 10.1117/12.591648
Show Author Affiliations
Bo Gu, GSI Lumonics Inc. (United States)


Published in SPIE Proceedings Vol. 5713:
Photon Processing in Microelectronics and Photonics IV
Jim Fieret; David B. Geohegan; Friedrich G. Bachmann; Willem Hoving; Frank Träger; Peter R. Herman; Jan J. Dubowski; Tatsuo Okada; Kunihiko Washio; Yongfeng Lu; Craig B. Arnold, Editor(s)

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