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Proceedings Paper

Improved LPE regrowth process of high-power InGaAsP/InP single lobe operation BH lasers
Author(s): Alexander V. Ovchinnikov; Igor E. Berishev; Dmitry Z. Garbuzov; Yu V. Ipyin; Natal'a D. Il'inskaya; Nikita A. Pikhtin; N. L. Rassudov; Ilya S. Tarasov
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Paper Abstract

We report the improved LPE regrowth prooess o InGaAsP/InP BR lasers.This method is based on the efeot o laP layers growth seleotivity. The proposed etched mesa proi1e provides the localization o! blocking p-n-junction on the mesa sidewall in the close vicinity o active layer. The mechanism responsible ror the increase of threshold current density(Jth) and the decrease o differential quantum eicienoy (ηd) in narrow (W<1Oμm) BR lasers was revealed in the set or special experiments. The modification of the rerowth process allowed to improve the lasing characteristics and to achieve 160 mW single-lobe output.

Paper Details

Date Published: 26 June 1992
PDF: 8 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59163
Show Author Affiliations
Alexander V. Ovchinnikov, A.F. Ioffe Physical-Technical Institute (Russia)
Igor E. Berishev, A.F. Ioffe Physical-Technical Institute (Russia)
Dmitry Z. Garbuzov, A.F. Ioffe Physical-Technical Institute (Russia)
Yu V. Ipyin, A.F. Ioffe Physical-Technical Institute (Russia)
Natal'a D. Il'inskaya, A.F. Ioffe Physical-Technical Institute (Russia)
Nikita A. Pikhtin, A.F. Ioffe Physical-Technical Institute (Russia)
N. L. Rassudov, A.F. Ioffe Physical-Technical Institute (Russia)
Ilya S. Tarasov, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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