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Proceedings Paper

Distributed-feedback vertical-cavity surface-emitting laser with resonant-periodic-gain active region
Author(s): A. Mohammed Mahbobzadeh; Emmanuelle Gandjbakhch; Eric A. Armour; Kang Zheng; Shang Zhu Sun; Christian F. Schaus; Marek Osinski
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Paper Abstract

Fabrication and lasing characteristics of prototype MOCVD-grown GaAs/AlGaAs/AlAs distributed-feedback resonant-periodic-gain surface-emitting lasers are reported. The new structure eliminates the need for end reflectors in earlier resonant-periodic-gain lasers, thereby reducing considerably the total thickness of the device. A new hybrid distributed-Bragg-reflector/distributed-feedback resonant-periodic-gain structure, compatible with the transverse-junction electrical pumping scheme, is also proposed.

Paper Details

Date Published: 26 June 1992
PDF: 12 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59160
Show Author Affiliations
A. Mohammed Mahbobzadeh, Univ. of New Mexico (United States)
Emmanuelle Gandjbakhch, Univ. of New Mexico (United States)
Eric A. Armour, Univ. of New Mexico (United States)
Kang Zheng, Univ. of New Mexico (United States)
Shang Zhu Sun, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)
Marek Osinski, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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