Share Email Print
cover

Proceedings Paper

High-power InGaAsP-InP large optical cavity lasers emitting at 1.55 um
Author(s): Jingchang Zhong; Ronghui Li; Baoren Zhu; Yingjie Zhao
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

High-power large-optical-cavity (LOC) InGaAsP-InP lasers emitting at 1.55 micron were prepared by using a proper LPE growth technique. Long-lived LOC lasers with the output power higher than 2 W in pulsed operation at room temperature were fabricated, with the threshold currents as low as Jth = 2.7 KA/sq cm or less and temperature stability as high as T0 of 130 K.

Paper Details

Date Published: 26 June 1992
PDF: 5 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59156
Show Author Affiliations
Jingchang Zhong, Changchun Institute of Optics and Fine Mechanics (China)
Ronghui Li, Changchun Institute of Optics and Fine Mechanics (China)
Baoren Zhu, Changchun Institute of Optics and Fine Mechanics (China)
Yingjie Zhao, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

© SPIE. Terms of Use
Back to Top