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Proceedings Paper

Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source
Author(s): Keiichi Yodoshi; Norio Tabuchi; Atsushi Tajiri; Kimihide Minakuchi; Yasuyuki Bessho; Koji Komeda; Yasuaki Inoue; Koji Tominaga; Takao Yamaguchi
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Paper Abstract

A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 jim thick p-cladding layer, a 900 jim long cavity length, and current-blocking regions near the cavity facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

Paper Details

Date Published: 26 June 1992
PDF: 7 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59153
Show Author Affiliations
Keiichi Yodoshi, Sanyo Electric Co., Ltd. (Japan)
Norio Tabuchi, Sanyo Electric Co., Ltd. (Japan)
Atsushi Tajiri, Sanyo Electric Co., Ltd. (Japan)
Kimihide Minakuchi, Sanyo Electric Co., Ltd. (Japan)
Yasuyuki Bessho, Sanyo Electric Co., Ltd. (Japan)
Koji Komeda, Sanyo Electric Co., Ltd. (Japan)
Yasuaki Inoue, Sanyo Electric Co., Ltd. (Japan)
Koji Tominaga, Sanyo Electric Co., Ltd. (Japan)
Takao Yamaguchi, Sanyo Electric Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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