Share Email Print
cover

Proceedings Paper

High power GaInAs lasers with distributed Bragg reflectors
Author(s): Stephen O'Brien; Ross Parke; David F. Welch; David G. Mehuys; Donald R. Scifres
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Single-mode strained-layer lasers have been fabricated which use buried second-order gratings for distributed Bragg reflectors. The lasers contain a strained GaInAs quantum well in the active region and operate in an edge emitting fashion with CW powers in excess of 110 mW. Single longitudinal and transverse mode operation is maintained at about 971.9 nm up to 42 mW. Total power conversion efficiencies as high as 28 percent have been observed. The longitudinal and transverse mode behavior is stable under 90 percent amplitude modulation with 50 percent duty cycle pulses at 10 kHz and 10 MHz. Preliminary life-test data at 40 C also indicate room temperature lifetimes in excess of 45,000 hours.

Paper Details

Date Published: 26 June 1992
PDF: 7 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59152
Show Author Affiliations
Stephen O'Brien, Spectra Diode Labs., Inc. (United States)
Ross Parke, Spectra Diode Labs., Inc. (United States)
David F. Welch, Spectra Diode Labs., Inc. (United States)
David G. Mehuys, Spectra Diode Labs., Inc. (United States)
Donald R. Scifres, Spectra Diode Labs., Inc. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

© SPIE. Terms of Use
Back to Top