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Proceedings Paper

High-power TQW AlGaAs laser with new inner-stripe structure
Author(s): Akihiro Shima; T. Miura; T. Shiba; Tomoko Kadowaki; N. Hayafuji; Motoharu Miyashita; S. Karakida; Nobuaki Kaneno; H. Kizuki; Etsuji Omura; Masao Aiga; Kenji Ikeda
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Paper Abstract

An approach to mass-production of triple quantum well lasers with a buried-ridge, loss-guided inner-stripe structure is demonstrated, using a large-scale metalorganic chemical vapor deposition. The lasers obtained from nine epi-wafers grown at one time show the uniform characteristics. In regard to high-power characteristics, the fundamental transverse mode up to 100mW and the maximum output power of - 170mW are realized at room temperature. Even at 95 C, the light output power of 100mW is obtained. The lasers have been operating over 1000 hours without failure at 6O C, 50mW. To realize the further uniformity and reproducibility of the laser characteristics, we have Introduced a newly developed etching method with an etching stop layer in the ridge formation.

Paper Details

Date Published: 26 June 1992
PDF: 8 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59151
Show Author Affiliations
Akihiro Shima, Mitsubishi Electric Corp. (Japan)
T. Miura, Mitsubishi Electric Corp. (Japan)
T. Shiba, Mitsubishi Electric Corp. (Japan)
Tomoko Kadowaki, Mitsubishi Electric Corp. (Japan)
N. Hayafuji, Mitsubishi Electric Corp. (Japan)
Motoharu Miyashita, Mitsubishi Electric Corp. (Japan)
S. Karakida, Mitsubishi Electric Corp. (Japan)
Nobuaki Kaneno, Mitsubishi Electric Corp. (Japan)
H. Kizuki, Mitsubishi Electric Corp. (Japan)
Etsuji Omura, Mitsubishi Electric Corp. (Japan)
Masao Aiga, Mitsubishi Electric Corp. (Japan)
Kenji Ikeda, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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