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Proceedings Paper

Efficiency and reliability of AlInGaP LEDs grown on germanium substrates
Author(s): Paola Altieri; Arndt Jaeger; Peter Stauss; Torsten Pietzonka; Klaus Streubel
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Paper Abstract

The use of Germanium as an alternative substrate for the growth of AlInGaP LEDs provides several technical advantages such as lower substrate costs and the possibility of fabricating As-free AlInGaP devices. The LED layer structures are grown in a multiwafer MOVPE reactor on 4 inch Ge substrates. The growth conditions, such as temperature and substrate orientation, influence the LED external efficiency and its degradation behavior. In particular, it is found that during growth Ge is incorporated into the layers, which strongly affects the LED efficiency. Moreover a defect annealing occurs during regular operation resulting in an increased efficiency. Electrical characterization as well as deep level transient spectroscopy are performed in order to characterize the nonradiative recombination centers. In addition a quantitative analysis of the external quantum efficiency, before and after degradation, is carried out and the relative change in the nonradiative recombination rate is evaluated.

Paper Details

Date Published: 7 March 2005
PDF: 9 pages
Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); doi: 10.1117/12.591508
Show Author Affiliations
Paola Altieri, OSRAM Opto Semiconductors GmbH (Germany)
Arndt Jaeger, OSRAM Opto Semiconductors GmbH (Germany)
Peter Stauss, OSRAM Opto Semiconductors GmbH (Germany)
Torsten Pietzonka, OSRAM Opto Semiconductors GmbH (Germany)
Klaus Streubel, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 5739:
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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