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Proceedings Paper

Semiconductor laser array in an external Talbot cavity
Author(s): Robert G. Waarts; Derek W. Nam; David F. Welch; David G. Mehuys; William J. Cassarly; John C. Ehlert; J. Michael Finlan; Kevin M. Flood
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Paper Abstract

This paper describes semiconductor laser arrays placed in an external Talbot cavity. The external Talbot cavity couples the light between many adjacent lasers such that all lasers operate at the same frequency and phase, resulting in a high power diffraction limited output beam. We designed a compact cavity which is comprised of a 30 by 50 element monolithic 2-D laser array, a GaP mass transport lens array, a liquid crystal array, a phase sensing and control system and a waveguide. Initial results obtained from a 20 element linear Ta1bOt cavity with a calculated mode discrimination similar to the 2-D cavity demonstrate in excess of 30 mW cw per laser element in a diffraction limited far field. In addition we have also demonstrated 50 Watt CW incoherent output power from a monolithic 2D laser array

Paper Details

Date Published: 26 June 1992
PDF: 11 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59148
Show Author Affiliations
Robert G. Waarts, Spectra Diode Labs., Inc. (United States)
Derek W. Nam, Spectra Diode Labs., Inc. (United States)
David F. Welch, Spectra Diode Labs., Inc. (United States)
David G. Mehuys, Spectra Diode Labs., Inc. (United States)
William J. Cassarly, GE Astro Space Div. (United States)
John C. Ehlert, GE Astro Space Div. (United States)
J. Michael Finlan, LSA Photonics Div. (United States)
Kevin M. Flood, LSA Photonics Div. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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