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Proceedings Paper

Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells
Author(s): Richard F. Murison; Shuyen R. Lee; Michael J. Brown; Nigel Holehouse; Alan H. Moore; Timothy M. Cockerill; James J. Coleman
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Paper Abstract

We describe 2.5Mm wide Ridge Waveguide Lasers emitting in the wavelength range 1045nm-1065nm. These are fabricated from strained layer single quantum well epitaxial heterostructures with 30%-31% InAs in the quantum well. The devices exhibit stable single spatial mode, single spectral line operation over a wide range of output power and temperature. Preliminary data suggests that reliable high power CW operation may be obtained.

Paper Details

Date Published: 26 June 1992
PDF: 6 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59147
Show Author Affiliations
Richard F. Murison, EG&G Canada Ltd. (Canada)
Shuyen R. Lee, EG&G Canada Ltd. (Canada)
Michael J. Brown, EG&G Canada Ltd. (Canada)
Nigel Holehouse, EG&G Canada Ltd. (Canada)
Alan H. Moore, EG&G Canada Ltd. (Canada)
Timothy M. Cockerill, Univ. of Illinois/Urbana-Champaign (United States)
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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