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Proceedings Paper

High-power single-frequency 980-nm diode lasers
Author(s): Robert B. Lauer
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Paper Abstract

The design, fabrication, and characteristics of high power 980 nm strained layer lasers will be described in detail. These lnGaAs/GaAs ridge waveguide lasers show excellent optical beam quality with total fundamental mode powers of approximately 200 mW. Cavity losses are less than 3 cm1 , and internal efficiencies approach 1 00%. Single frequency operation is typically observed for these lasers, and side mode suppression ratios of 30 dB and linewidths of 2 MHz are common.

Paper Details

Date Published: 26 June 1992
PDF: 7 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59145
Show Author Affiliations
Robert B. Lauer, GTE Labs. Inc. (United States)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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