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Proceedings Paper

2-ps RC product new SI-BH laser structure for far over 20-GHz operation
Author(s): Christophe Kazmierski; D. Robein; D. Mathoorasing
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Paper Abstract

We designed a new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InPlayers. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pP and the series resistance around 3 (RC product < 2 ps) of the laser structure was observed. Using this new structure a 1 .3 jtm bulk laser had a nicely smooth optical response with bandwidth in a large excess of 18GHz (our measurement limit). A fitting procedure, using the laser response transfer function, confirmed an neglecting RC product (2 ps), a power limited bandwidth of about 21 GHz and excellent RF modulation efficiency.

Paper Details

Date Published: 26 June 1992
PDF: 7 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59143
Show Author Affiliations
Christophe Kazmierski, Ctr. National d'Etudes de Telecommunications (France)
D. Robein, Ctr. National d'Etudes de Telecommunications (France)
D. Mathoorasing, Ctr. National d'Etudes de Telecommunications (France)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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