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Proceedings Paper

High-frequency modulation of semiconductor laser amplifiers
Author(s): Andrew M. Lomax; Ian H. White
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Paper Abstract

Picosecond pulse amplification in modulated amplifiers is demonstrated with negligible pulse distortion for modulation frequencies between 1 and 4 0Hz. Existing measurements show that up to 2.5 GHz modulation can be achieved with a gate "on" time of 200 ps. A numerical model is reported which simulates the behaviour of diode laser amplifiers under RF current modulation and is shown to be in good agreementwith experimental demonstration. A simple analytical modelis also reported to indicate the physical causes in observed operating trends. It is shown that in optimized bulk devices, good modulation depth could potentially be achieved with a 100 ps gate "on" time at 5GHz modulation frequency.

Paper Details

Date Published: 26 June 1992
PDF: 9 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59142
Show Author Affiliations
Andrew M. Lomax, Cambridge Univ. (United Kingdom)
Ian H. White, Bath Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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