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Proceedings Paper

Reliability of wide bandgap semiconductor diode lasers
Author(s): Steven L. Yellen; Robert G. Waters; Harvey B. Serreze; Allan H. Shepard; John A. Baumann; Richard J. Dalby
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Paper Abstract

Research into new material systems to both extend the operating wavelength and improve the performance of the GaAs/AlGaAs material system has led to several insights into the reliability of wide bandgap (E(g) greater than 1eV) semiconductor lasers. Strained InGaAs lasers, operating in the wavelength range 0.9-1.1 micron, have eliminated sudden failures and exhibited very low gradual degradation rates. Strained InAlGaAs lasers, a possible replacement for AlGaAs lasers at 0.8 micron have shown the potential to both eliminate sudden failures and improve gradual degradation as compared to AlGaAs lasers. Finally, visible GaInP lasers, operating at 0.65 micron, have eliminated sudden failures and exhibited surprising gradual degradation characteristics for lasers operating at modest efficiencies. Specific results and subsequent conclusions with the supporting life test characteristics and failure analysis are contained in this work.

Paper Details

Date Published: 26 June 1992
PDF: 12 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59141
Show Author Affiliations
Steven L. Yellen, McDonnell Douglas Electronic Systems Co. (United States)
Robert G. Waters, McDonnell Douglas Electronic Systems Co. (United States)
Harvey B. Serreze, McDonnell Douglas Electronic Systems Co. (United States)
Allan H. Shepard, McDonnell Douglas Electronic Systems Co. (United States)
John A. Baumann, McDonnell Douglas Electronic Systems Co. (United States)
Richard J. Dalby, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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