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Proceedings Paper

Effects of design and processing on the reliability of high-power AlGaAs diode lasers
Author(s): Allen D. Danner; Susan W. Gersten; David K. Wagner; Rushikesh M. Patel; Kambiz Fallahpour; Margaret H. Abraham; Andre Khachatourians; Darren Perrachione
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Paper Abstract

The use of high power laser diodes in applications such as pumping of solid state lasers requires devices which are highly reliable. We report the results of a series of experiments in which the effects on device reliability of several key processing steps are investigated. Electron Beam Induced Current (EBIC) is used to nondestructively characterize the Dark Line Defects (DLD5) throughout the lifetest and provides information regarding the source and propagation of the DLDs.

Paper Details

Date Published: 26 June 1992
PDF: 4 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59139
Show Author Affiliations
Allen D. Danner, Applied Solar Energy Corp. (United States)
Susan W. Gersten, Applied Solar Energy Corp. (United States)
David K. Wagner, Applied Solar Energy Corp. (United States)
Rushikesh M. Patel, Applied Solar Energy Corp. (United States)
Kambiz Fallahpour, Applied Solar Energy Corp. (United States)
Margaret H. Abraham, Applied Solar Energy Corp. (United States)
Andre Khachatourians, Applied Solar Energy Corp. (United States)
Darren Perrachione, Applied Solar Energy Corp. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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