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Proceedings Paper

Laser ablation of TiO2-2xNx targets for efficient N-doping into anatase TiO2 photocatalytic films
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Paper Abstract

Among the well-known photo-catalytic materials, the anatase TiO2 is the most promising in terms of its chemical stability and high reactivity. It is known that the photo-catalytic activity under the visible light irradiation can be enhanced by nitrogen doping into the anatase, because the substitutional nitrogen produces an impurity state which absorbs the visible light. In this paper, we will report on the properties of the nitrogen doped films with different dopant concentrations. The anatase films are prepared by KrF excimer pulsed-laser ablation of TiO2-xNx targets. The films are deposited on the (100) LaAlO3 substrate which has a good lattice matching with anatase (~ 0.2%). First, we discuss the optimization of the growth conditions. To prepare the nitrogen doped anatase thin films, we have developed a low-temperature epitaxy. The growth of anatase-type TiO2 was confirmed using an x-ray diffraction (XRD). The nitrogen incorporation was evaluated by an x-ray photoemission spectroscopy (XPS). The as-grown films have very smooth surface and exhibit good amphiphilic properties. Then, we present the photo-catalytic activity of the films. The nitrogen doping concentration was varied by adjusting the amount of nitrogen in the ablation targets. The photo-catalytic activity was measured by the decomposition rate of methylene blue solution under a fluorescent light illumination.

Paper Details

Date Published: 12 April 2005
PDF: 8 pages
Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); doi: 10.1117/12.591362
Show Author Affiliations
Tatsunori Sakano, Keio Univ. (Japan)
Takeshi Okato, Keio Univ. (Japan)
Minoru Obara, Keio Univ. (Japan)


Published in SPIE Proceedings Vol. 5713:
Photon Processing in Microelectronics and Photonics IV
Jim Fieret; Peter R. Herman; Tatsuo Okada; Craig B. Arnold; David B. Geohegan; Frank Träger; Jan J. Dubowski; Friedrich G. Bachmann; Willem Hoving; Kunihiko Washio; Yongfeng Lu, Editor(s)

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