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Proceedings Paper

3 um InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy
Author(s): Raymond J. Menna; David R. Capewell; Ramon U. Martinelli; Pamela K. York; Ronald E. Enstrom
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Paper Abstract

We have observed laser action in InO7GaO3AsO72SbO28 IInPO.7SbO.3 double heterojunction, diode lasers at ? = 3.06 .tm. The maximum operating temperature was 35 K. The threshold current densities were in the range of 200 - 330 A /cm These devices were grown by organometallic vapor-phase epitaxy.

Paper Details

Date Published: 26 June 1992
PDF: 8 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59134
Show Author Affiliations
Raymond J. Menna, David Sarnoff Research Ctr. (United States)
David R. Capewell, David Sarnoff Research Ctr. (United States)
Ramon U. Martinelli, David Sarnoff Research Ctr. (United States)
Pamela K. York, David Sarnoff Research Ctr. (United States)
Ronald E. Enstrom, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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