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Proceedings Paper

Mid-IR HgCdTe double heterostructure lasers
Author(s): Ricardo R. Zucca; Majid Zandian; Jose M. Arias; Rodolfo Victor Gil; Jasprit Singh
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Paper Abstract

The fabrication and characteristics of the first Hg(1-x)Cd(x)Te double heterostructure mid-IR injection laser (Zandian et al., 1991) are described in detail, and new results on an expanded range of operation of this laser are presented. Three new double heterostructures were grown, which all produced working lasers operating under pulsed current at temperatures between 40 and 90 K. At 77 K, their emission wavelengths were 2.9, 3.4, and 3.9 microns; the lowest threshold current density measured was 521 A/sq cm, very close to that predicted by a numerical calculation.

Paper Details

Date Published: 26 June 1992
PDF: 13 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59133
Show Author Affiliations
Ricardo R. Zucca, Rockwell International Science Ctr. (United States)
Majid Zandian, Rockwell International Science Ctr. (United States)
Jose M. Arias, Rockwell International Science Ctr. (United States)
Rodolfo Victor Gil, Rockwell International Science Ctr. (United States)
Jasprit Singh, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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