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Proceedings Paper

High-power AlGaInP visible laser diodes and arrays
Author(s): Harvey B. Serreze; Y. C. Chen; Ari Rosenberg
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Paper Abstract

High-power laser diodes operating in the wavelength range of 640 to 675 nm are described. Using a strained-layer, single quantum well, epitaxial structure in conjunction with oxide-stripe construction, CW power outputs of individual diodes in excess of 1 watt at 670 nm and over 450 mW at 640 nm have been achieved. These accomplishments were made possible by reducing the room temperature CW threshold current density to slightly over 300 A/sq cm at 670 nm and 560 A/sq cm at 640 nm. Measurements have also been made of spectral output, characteristic temperature, far-field intensity, operating lifetime, and internal laser parameters.

Paper Details

Date Published: 26 June 1992
PDF: 8 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59131
Show Author Affiliations
Harvey B. Serreze, McDonnell Douglas Electronic Systems Co. (United States)
Y. C. Chen, McDonnell Douglas Electronic Systems Co. (United States)
Ari Rosenberg, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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