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Proceedings Paper

Differential gain and damping factor in strained InGaAs/GaAs quantum well lasers
Author(s): Luke F. Lester; William J. Schaff; Sean S. O'Keefe; Xiao J. Song; B. A. Foreman; Lester Fuess Eastman
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Paper Abstract

The differential gain, modulation response, and damping rate of strained-layer Ino•3Ga(J•7As multiple quantum well (MQW) short cavity graded-index separate confmement heterostrucutre (GRINSCH) and SCH lasers fabricated by chemically-assisted ion beam etching (CAIBE) are analyzed. Calculated differential gains vary from 0.7 to. 1 .6 x 1015 cm2, with only relatively long lasers of 400 p.m demonstrating very high differential gain. For the GRINSCH lasers, a CW 3-dB bandwidth of 22 GHz has been measured that is limited primarily by heating and a low frequency rolloff. The latter is improved dramatically using an SCH design resulting in an improvement of the 3-dB bandwidth to 28 GHz. Cather transport theory (also known as well-barrier hole burning) is shown to model the damping behavior of quantum well lasers from low to moderate photon densities.

Paper Details

Date Published: 26 June 1992
PDF: 12 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59130
Show Author Affiliations
Luke F. Lester, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)
Sean S. O'Keefe, Cornell Univ. (United States)
Xiao J. Song, Cornell Univ. (United States)
B. A. Foreman, Cornell Univ. (United States)
Lester Fuess Eastman, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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