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Proceedings Paper

High-speed properties of 1.55 um InGaAs-InGaAsP MQW L/4 shifted DFB lasers
Author(s): Kazuhisa Uomi; Emiko Aoki; Tomonobu Tsuchiya; Munetoshi Suzuki
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Paper Abstract

A high-speed low-chirp 1.55 j.tm MQW-DFB laser is demonstrated through the optimization of an MQW active layer. A 3 dB bandwidth of 15 GHz and a record chirp width of 0.26 nm under 10 Gbit/s direct modulation were obtained. The dependence of the intrinsic dynamic properties, such as the relaxation oscillation frequency and damping K-factor, on the number of quantum wells is also investigated. The physical origin of the nonlinear damping is investigated by focusing on the laser structure and the wavelength dependence of the nonlinear gain coefficient e in semiconductor lasers.

Paper Details

Date Published: 26 June 1992
PDF: 9 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59128
Show Author Affiliations
Kazuhisa Uomi, Hitachi Central Research Lab. (Japan)
Emiko Aoki, Hitachi Central Research Lab. (Japan)
Tomonobu Tsuchiya, Hitachi Central Research Lab. (Japan)
Munetoshi Suzuki, Hitachi Central Research Lab. (Japan)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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