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Proceedings Paper

High-power, optically pumped, pulsed InGaAs/GaAs vertical-cavity surface-emitting semiconductor laser with resonant periodic gain at 918 nm
Author(s): Cheryl J. White; Alan H. Paxton; John Gerard McInerney; Christian F. Schaus
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Paper Abstract

An InGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) with resonant periodic gain (RPG) was optically pumped using a pulsed dye laser at 760 nm with 500 ns pulse width. Output pulse energies at 918 nm in excess of 20 mJ were observed from a 3.3 mm diameter lasing spot. This corresponds to an efficiency of greater than 20%. Approximate area scaling of threshold and maximum available output power (limited by the optical pumping damage threshold) was demonstrated.

Paper Details

Date Published: 26 June 1992
PDF: 10 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59126
Show Author Affiliations
Cheryl J. White, Mission Research Corp. (United States)
Alan H. Paxton, Mission Research Corp. (United States)
John Gerard McInerney, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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