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Proceedings Paper

Thermal properties of etched-well surface-emitting diode lasers and two-dimensional arrays
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Paper Abstract

A self-consistent thermal-electrical model of etched-well GaAs/A1GaAs doubleheterostructure VCSELs is used to optimize an individual device design with the goal of reducing the relative power loss due to heating and maximizing the optical output power. An optimal active-region diameter is determined, such that the excess of supplied power over the cw lasing threshold power at the corresponding active-region temperature is maximum. The role of other structural parameters, such as thicknesses and doping levels of both cladding layers, is also discussed. The single-emitter analysis is then modified to study very-large-size two-dimensional (2-D) VCSEL arrays. Severe crosstalk is predicted for closely packed arrays and conditions are identified for an array configuration that would not suffer from the excessive cross-talk penalty.

Paper Details

Date Published: 26 June 1992
PDF: 23 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59124
Show Author Affiliations
Marek Osinski, Univ. of New Mexico (United States)
Wlodzimierz Nakwaski, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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