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Proceedings Paper

Operating characteristics of broad area traveling wave semiconductor amplifiers
Author(s): David G. Mehuys; Lew Goldberg
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Paper Abstract

Broad area traveling wave amplifiers in single-pass and double-pass configurations have been characterized using both analytical and experimental methods. Amplified emission up to 12.0 W in a nearly-diffraction-limited beam was achieved from double-pass amplifiers under short-pulse conditions, and 7.7 W in a nearly-diffraction-limited beam was achieved from single-pass amplifiers under long-pulse conditions.

Paper Details

Date Published: 26 June 1992
PDF: 8 pages
Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); doi: 10.1117/12.59121
Show Author Affiliations
David G. Mehuys, Spectra Diode Labs., Inc. (United States)
Lew Goldberg, Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 1634:
Laser Diode Technology and Applications IV
Daniel S. Renner, Editor(s)

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