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Proceedings Paper

Oxidation lift-off technology
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Paper Abstract

Reduction of the stresses produced in hybrid integrated structures due to thermal expansion coefficient difference requires removal of the substrate as one of the key elements. Commonly used epitaxial lift-off technique can hardly be employed for the fabrication of VCSELs with all-epitaxial DBRs due to the low etching selectivity between AlAs sacrificial layer and DBR layers with high Al contents. Novel method of substrate removal named oxidation lift-off was proposed and demonstrated. This process shows higher selectivity against Al-content than epitaxial lift-off method, that allows for the release of a VCSEL structure with epitaxial DBRs and separate individual components on Si, reduces the number of process steps and eventually reduces the cost of the fabricated/integrated devices. Au-Ge alloy was used for the metal bonding of the test oxidation lift-off structures grown by MBE. 1 μm thick AlAs imbedded sacrificial layer was laterally oxidized to release the partially processed devices from the GaAs substrate. 2D array of separated VCSELs was fabricated on top of the Si substrate. Contact annealing, substrate removal, device separation, bonding and formation of the oxide apertures were completed within a single processing step. Electroluminescent spectra, I-V and P-I characteristics of fabricated devices were measured. Series resistance of fabricated devices was found to be about 100 Ohms. Lasing with threshold current of 8 mA was demonstrated for the device with 25 μm aperture.

Paper Details

Date Published: 7 March 2005
PDF: 9 pages
Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); doi: 10.1117/12.591112
Show Author Affiliations
Serge Oktyabrsky, Univ. at Albany (United States)
Michael Yakimov, Univ. at Albany (United States)
Vadim Tokranov, Univ. at Albany (United States)
Jobert van Eisden, Univ. at Albany (United States)
Alexei Katsnelson, Univ. at Albany (United States)


Published in SPIE Proceedings Vol. 5730:
Optoelectronic Integration on Silicon II
Joel A. Kubby; Ghassan E. Jabbour, Editor(s)

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