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Proceedings Paper

Temperature dependence of the threshold electric field in a hot electron VCSEL
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Paper Abstract

The operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure -- Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga1-xAlxAs p-n junction. It is therefore a field - effect device and the light emission from the device is independent of the polarity of the applied voltage. In this study, we present the temperature dependence of the operational characteristics of the device. Experimental studies comprising of the measurements of the I-V characteristics, electroluminescence, reflectivity, and temperature dependent light-applied electric field (L-F) characteristics are conducted to find the optimum operating temperature of the device.

Paper Details

Date Published: 13 April 2005
PDF: 8 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.591107
Show Author Affiliations
Ali Serpenguzel, Koc Univ. (Turkey)
Naci Balkan, Essex Univ. (United Kingdom)
Ayse Erol, Istanbul Univ. (Turkey)
M. Cetin Arikan, Istanbul Univ. (Turkey)
John Roberts, Sheffield Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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