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Proceedings Paper

Interdiffused InGaAsSbN quantum wells on GaAs for 1300- to 1550-nm lasers
Author(s): Ronald A. Arif; Nelson Tansu
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Paper Abstract

Novel method to realize 1300-1550 nm InGaAsNSb quantum well (QW) structure on GaAs substrate is presented and analyzed. The proposed method is based on nitrogen-based inter-diffusion from InGaAsN nanometers-thick barriers into InGaAsSb quantum well layer. This method should allow realization of InGaAsNSb quantum well layer, in particular by metalorganic chemical vapor deposition (MOCVD), which would otherwise be very challenging due to the conflicting nature of optimum epitaxy parameters / conditions that nitride-based and antimonide-based compounds require.

Paper Details

Date Published: 28 April 2005
PDF: 12 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.591023
Show Author Affiliations
Ronald A. Arif, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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