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Proceedings Paper

Gain lever characterization in monolithically integrated diode lasers
Author(s): Michael Pocha; Tiziana Bond; Rebecca Welty; Stephen Vernon; Jeffrey Kallman; Elaine Behymer
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Paper Abstract

Gain Lever, an effect for enhancing amplitude modulation (AM) efficiency in multisection laser diodes1, has been characterized in InGaAs DQW edge emitting lasers that are integrated with passive waveguides. Specifically designed structures which give a range of split ratios from 1:1 to 9:1 have been fabricated and measured to fully characterize the parameter space for operation in the gain lever mode. Additionally the experimental results are compared to a hybrid 3-D simulation involving effective index method (EIM) reduction to 2-D. Gains greater than 6 dB in the AM efficiency can be achieved within the appropriate operating range, but this gain drops rapidly as the parameter range is exceeded. High speed RF modulation with significant gain is, in principle, possible if proper biasing and modulation conditions are used. This phenomenon can also be useful for high-speed digital information transmission.

Paper Details

Date Published: 28 April 2005
PDF: 11 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.590904
Show Author Affiliations
Michael Pocha, Lawrence Livermore National Lab. (United States)
Tiziana Bond, Lawrence Livermore National Lab. (United States)
Rebecca Welty, Lawrence Livermore National Lab. (United States)
Stephen Vernon, Lawrence Livermore National Lab. (United States)
Jeffrey Kallman, Lawrence Livermore National Lab. (United States)
Elaine Behymer, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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