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Proceedings Paper

Bus-coupled microresonator lasers
Author(s): Seung-June Choi; Zhen Peng; Qi Yang; Sang Jun Choi; P. Daniel Dapkus
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Paper Abstract

Microresonators are of considerable interest in wavelength division multiplexing (WDM) applications due to their small feature size and versatile functionality. When combined with other high-Q passive and active elements connected through a common bus line, microresonator lasers will enable the fabrication of sophisticated photonic integrated circuits (PICs) that take full advantage of compact chip layouts. Circular microresonator lasers are attractive sources for PICs because of their cleavage-free cavity and excellent wavelength selectivity. We have demonstrated an InP/InGaAsP microdisk resonator laser, where a high-Q microdisk lasing mode is vertically coupled out through a straight bus waveguide. The vertically coupled design is realized by using wafer-boding techniques. By connecting multiple microdisk lasers through a common output bus line, we have demonstrated an 8-channel laser arrays with 1.6 nm (200 GHz) spectral channel spacing. The channel spacing is achieved by varying the disk resonator radii from 10.6 to 10.95 mm. Typical threshold current of ~ 7 mA is observed under CW lasing operation near 1510 nm. In this presentation we will discuss the operating characteristics of microresonator lasers and the use of resonators in laser cavities as wavelength selection and stabilization elements.

Paper Details

Date Published: 1 April 2005
PDF: 10 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.590836
Show Author Affiliations
Seung-June Choi, Univ. of Southern California (United States)
Zhen Peng, Univ. of Southern California (United States)
Qi Yang, Univ. of Southern California (United States)
Sang Jun Choi, Univ. of Southern California (United States)
P. Daniel Dapkus, Univ. of Southern California (United States)


Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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