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Proceedings Paper

Scaling laws of nonlinear silicon nanophotonics
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Paper Abstract

Scaling properties of two photon absorption, free carrier scattering, Raman scattering and Kerr effect in silicon waveguides is reported. It is shown that the dependence of minority carrier lifetime on waveguide dimensions has a profound impact on the performance of nonlinear optical devices built using silicon waveguides.

Paper Details

Date Published: 7 March 2005
PDF: 9 pages
Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); doi: 10.1117/12.590831
Show Author Affiliations
Bahram Jalali, Univ. of California/Los Angeles (United States)
Ozdal Boyraz, Univ. of California/Los Angeles (United States)
Dimitri Dimitropoulos, Univ. of California/Los Angeles (United States)
Varun Raghunathan, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 5730:
Optoelectronic Integration on Silicon II
Joel A. Kubby; Ghassan E. Jabbour, Editor(s)

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