Share Email Print
cover

Proceedings Paper

Integrated InGaAlAs/InP laser-modulator using an identical multiple quantum well active layer
Author(s): Brem Kumar Saravanan; Christian Hanke; Thomas Knoedl; Martin Peschke; Roberto Macaluso; Bernhard Stegmueller
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We present experimental results on 40 Gb/s large-signal modulation performance of 1.31μm monolithic integrated laser-modulator in the InGaAlAs/InP material system, exploiting the gain and absorption properties of an identical multiple quantum well (MQW) active layer. In continuous wave operation, at 15°C, the devices achieved threshold currents < 28 mA, fiber coupled optical power levels up to +0.4 dBm. The measured small-signal modulation bandwidth was about 32 GHz. An air-cavity based Fabry-Perot interferometer has been realized to characterize the spectral chirp of the integrated structures in the time domain up to 40 Gb/s.

Paper Details

Date Published: 25 March 2005
PDF: 10 pages
Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); doi: 10.1117/12.590787
Show Author Affiliations
Brem Kumar Saravanan, Infineon Technologies AG (Germany)
Univ. of Ulm (Germany)
Christian Hanke, Infineon Technologies AG (Germany)
Thomas Knoedl, Infineon Technologies AG (Germany)
Martin Peschke, Infineon Technologies AG (Germany)
Univ. of Ulm (Germany)
Roberto Macaluso, Infineon Technologies AG (Germany)
Bernhard Stegmueller, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5729:
Optoelectronic Integrated Circuits VII
Louay A. Eldada; El-Hang Lee, Editor(s)

© SPIE. Terms of Use
Back to Top