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Proceedings Paper

Optical gate realization by laser crossing in thin-film semiconductors on glass
Author(s): Artur Erlacher; Bruno Ullrich; Ryan J. Konopinski; Heather J. Haugan
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Paper Abstract

We investigated a novel possibility to attain all-optical logical gates. The host of the device was a thin-film semiconductor (CdS, GaAs, InP) on glass produced by various methods (pulsed-laser deposition and metal organic chemical vapor deposition). In the thin-film two visible laser beams, the primary and secondary ray, were crossed in the same spot. In this way, the secondary beam caused a transmission decrease in the primary beam. Laser crossing is an extremely undemanding concept based on electronic absorption alterations. Apparently, every semiconductor can be used for laser crossed all-optical logics and, in contrary to other semiconductor based concepts, laser crossing does not demand specific materials, material qualities or nonlinear features. The unmatched overall simplicity and possible THz operations recommend laser crossing for the realization of all-optical digital devices.

Paper Details

Date Published: 4 April 2005
PDF: 8 pages
Proc. SPIE 5723, Optical Components and Materials II, (4 April 2005); doi: 10.1117/12.590760
Show Author Affiliations
Artur Erlacher, Bowling Green State Univ. (United States)
Bruno Ullrich, Bowling Green State Univ. (United States)
Ryan J. Konopinski, Bowling Green State Univ. (United States)
Heather J. Haugan, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 5723:
Optical Components and Materials II
Shibin Jiang; Michel J.F. Digonnet, Editor(s)

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