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Proceedings Paper

Effect of test environment on the surface breakdown characteristics of photoconducting silicon
Author(s): T. Asokan; Tangali S. Sudarshan
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Paper Abstract

The influence of test environments (vacuum and air) on the pre-breakdown and breakdown characteristics of photoconducting p-type silicon samples were investigated. The surface of all the samples were polished (mechanical and chemo-mechanical) to a fine finish (0.06 micrometers ) and cleaned by ultrasonic and RCA methods. The role of thermally grown thin amorphous SiO2 layer and the insulating epoxy layer on the breakdown properties were also investigated. The breakdown characteristics of the samples were found to be modified by the surface condition while testing in vacuum. Contrarily, the influence of those surface parameters on the breakdown properties of the same samples were found to be insignificant when the test environment was air. In general, the samples exhibited higher breakdown strength in air compared to that in vacuum. Besides, the lock-on behavior of the samples was identified only in vacuum (not in air) environment.

Paper Details

Date Published: 12 May 1992
PDF: 11 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59075
Show Author Affiliations
T. Asokan, Univ. of South Carolina (United States)
Tangali S. Sudarshan, Univ. of South Carolina (United States)


Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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