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Proceedings Paper

Power switching with a new material: CdTe:Cl
Author(s): Jean Lajzerowicz; Loick Verger; Francoise Mathy; Marc Cuzin; Jacques Pigneret
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Paper Abstract

CdTe material, with its high molecular weight (240), is widely used for radiation detection. The bandgap energy of CdTe is 1.45 eV. When doped with chlorine, which compensates the acceptor level introduced by cadmium vacancies, CdTe is intrinsic and presents a very high resistivity (> 108 (Omega) cm). The contacts were made by electroless metal deposition and further annealing; they were characterized with DC and pulsed voltages. For the first time, this paper presents power switching experiments with CdTe material. We investigated different types of crystals and contact geometries with gap size varying from less than one mm to a few millimeters. The switches were activated by a YAG laser 10 ns FWHM pulses (1.06 micrometers ) or with 160 kV X-rays 30 ns FWHM pulses. The time constant of recovery was found to be more than 10 ns. In some cases, for high voltages corresponding to fields higher than a few kV/cm, large recovery times of more than 100 ns were measured. This apparently long carrier lifetime, combined with the high resistivity, make CdTe an alternative material to Si and GaAs for some switching applications.

Paper Details

Date Published: 12 May 1992
PDF: 6 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59073
Show Author Affiliations
Jean Lajzerowicz, LETI/Commissariat a l'Energie Atomique (France)
Loick Verger, LETI/Commissariat a l'Energie Atomique (France)
Francoise Mathy, LETI/Commissariat a l'Energie Atomique (France)
Marc Cuzin, LETI/Commissariat a l'Energie Atomique (France)
Jacques Pigneret, Nucletudes SA (France)

Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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