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Proceedings Paper

Nondestructive evaluation of junction effects in GaAs avalanche photoconductors
Author(s): Michael H. Herman; Kenneth M. Positeri; S. M. Ahern; Robert A. Lewis
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Paper Abstract

We have studied the current-voltage-temperature response of off-state NIN GaAs Avalanche Photoconductors. These non-destructive tests, evaluated in terms of thermal activation energies (Ea), and Resistance-Voltage (R-V) characteristics, are found to effectively distinguish between two types of devices. The first type possesses Ea < Egap/2 and resistivity commensurate with bulk SI GaAs; the second demonstrates Ea > Egap/s and R values greatly surpassing those of bulk Semi-Insulating GaAs. These data are consistent with junction effects at both contact-bulk interfaces, arising from the formation of an uncompensated P-type region near the N+ contact layer. We explain the P-type behavior by trapped electron neutralization of the deep compensating donor EL2.

Paper Details

Date Published: 12 May 1992
PDF: 11 pages
Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); doi: 10.1117/12.59069
Show Author Affiliations
Michael H. Herman, Power Spectra, Inc. (United States)
Kenneth M. Positeri, Power Spectra, Inc. (United States)
S. M. Ahern, Power Spectra, Inc. (United States)
Robert A. Lewis, Power Spectra, Inc. (United States)


Published in SPIE Proceedings Vol. 1632:
Optically Activated Switching II
Guillermo M. Loubriel, Editor(s)

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